Chronos-Gan-Hemt-2-Defect-Detection-Nanostructure-Characterization-Composition-and-Doping-Metrology-Materials-Characterization-Attolight-Cathodoluminescence

氮化镓HEMT

步进重复模式，横截面

  • 每种合金都有独特的光谱特征:带边发射
  • c补偿GaN很容易区分
  • GaN:C的生长缺陷导致GaN:UID穿透缺陷
  • 可见螺纹位错特征
  • 像素尺寸40nm，采集时间160s

Chronos-Gan-Hemt-Defect-Detection-Nanostructure-Characterization-Composition-and-Doping-Metrology-Materials-Characterization-Attolight-Cathodoluminescence

由Attolight